Structural, electrical and optical properties of GaP codoped ZnO thin films

Journal Article · Tue Jun 05 04:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4710231· OSTI ID:22004152

Gowrishankar, S; Balakrishnan, L; Gopalakrishnan, N ^[1]

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1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620015 (India)

The GaP codoped ZnO (GPZO) thin films of different concentrations (0, 1, 2 and 4 mol%) have been grown by RF magnetron sputtering to realize p-ZnO. The grown films on sapphire substrates have been characterized by X-ray diffraction (XRD), Hall measurement, photoluminescence (PL), and Energy dispersive spectroscopy (EDS). XRD studies reveal that all the films are preferentially oriented along (002) plane. Hall measurement shows that 2% GPZO film shows low resistivity (2.17 {Omega} cm) and high hole concentration (1.8 x 10{sup 18} cm{sup -3} due to optimum amount of P incorporation. EDS spectra confirms the presence of Ga and P in 2 mol% GPZO film.

• OSTI ID: 22004152
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1447; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
DEPOSITION
EMISSION SPECTROSCOPY
GALLIUM
GALLIUM PHOSPHIDES
HOLES
OPTICAL PROPERTIES
PHOSPHORUS
PHOTOLUMINESCENCE
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
X-RAY DIFFRACTION
ZINC OXIDES