Organosilicon thin film deposition in glow discharges
- Universita di Bari (Italy)
Thin films have been deposited from hexamethyldisiloxane-oxygen fed radio-frequency glow discharges under the following conditions: O{sub 2}-to-HMDS ratio ranging from 0 to 20, fixed total flow rate of 15 sccm, 200 W input power, 100 mTorr pressure. The substrates are held at room temperature. The effect of oxygen-to-monomer ratio in the feed on both plasma species distribution and film chemical composition has been studied with a variety of diagnostics, i.e. Actinometric Optical Emission Spectroscopy, AOES, (plasma phase), Infrared Spectroscopy and Electron Spectroscopy for Chemical Analysis, ESCA, (surface). A mechanism of deposition is proposed, based on the role of Si-containing precursors and of SiO-containing ones, which accounts for the deposition rate and the film composition. The experimental apparatus consists of a stainless-steel parallel plate reactor with a 13.56 MHz rf power. Silicon substrates are positioned in the gap between the two electrodes on a grounded stainless-steel holder. Deposition rates have been evaluated, after each experiment, by means of gravimetric measurements. The optical emission from the discharges has been sampled through a quartz window and focused on the entrance slit of a 1 m focal length Jarrel-Ash monochromator. The relative concentration trends of Si, O, H, and C atoms and of SiO, OH, CH, and CO molecules in plasma phase, have been obtained by AOES as a function of feed composition, by utilizing Ar and He actinometers. ESCA analyses have been performed by means of a PHI 5300 Perkin Elmer spectrometer used in the fixed analyser transmission mode with pass ene of 35.75 eV.
- OSTI ID:
- 212955
- Report Number(s):
- CONF-950749--
- Country of Publication:
- United States
- Language:
- English
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