Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions

Journal Article · Mon Sep 28 04:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3232244· OSTI ID:21294343

Wang, J -Y; Chen, Y -T; Chen, C -T; Chen, Y -L; Chen, Y -F ^[1]; Lee, C -Y; Lin, C -F ^[2]

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1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China)

Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously.

• OSTI ID: 21294343
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DEPOSITION
ELECTROLUMINESCENCE
ENERGY GAP
HETEROJUNCTIONS
INDIUM OXIDES
LIGHT EMITTING DIODES
NICKEL OXIDES
QUANTUM WIRES
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
TIN OXIDES
ULTRAVIOLET RADIATION
VISIBLE RADIATION
ZINC OXIDES