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Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/1.4932194· OSTI ID:22499214
 [1]; ;  [1];  [2];  [3];  [1];  [4];  [1]
  1. Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  3. Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  4. Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030 (United States)
+ Show Author Affiliations
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either frontside or backside. Morphology, structural, chemical, and optical properties of sputtered NiO and ZnO films were also investigated.
OSTI ID:
22499214
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 10 Vol. 3; ISSN 2166-532X; ISSN AMPADS
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
FILMS
INDIUM
NICKEL OXIDES
OPTICAL PROPERTIES
PHOTODETECTORS
PLASTICS
POLYESTERS
QUANTUM EFFICIENCY
SPUTTERING
SUBSTRATES
TIN OXIDES
ZINC OXIDES