Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Journal Article · Mon Mar 31 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4870517· OSTI ID:22261601

Shi, Zhifeng; Zhang, Yuantao; Cui, Xijun; Wu, Bin; Zhuang, Shiwei; Yang, Fan; Zhang, Baolin; Du, Guotong ^[1]; Yang, Xiaotian ^[2]

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1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)
2. School of Electrical and Electronic Information, Jilin Institute of Architecture and Civil Engineering, Changchun 130118 (China)

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

• OSTI ID: 22261601
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTROLUMINESCENCE
GALLIUM NITRIDES
HETEROJUNCTIONS
LIGHT EMITTING DIODES
MONOCRYSTALS
QUANTUM EFFICIENCY
QUANTUM WIRES
THIN FILMS
ULTRAVIOLET RADIATION
ZINC OXIDES