Transmission electron microscopy: A critical analytical tool for ULSI technology

Journal Article · Tue Nov 24 04:00:00 EST 1998 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.56853· OSTI ID:21202326

Venables, David ^[1]; Susnitzky, David W; Mardinly, A John ^[2]

---

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
2. Materials Technology Department, Intel Corporation, 2200 Mission College Blvd., Santa Clara, California 95052 (United States)

An overview of the capabilities and limitations of transmission electron microscopy (TEM) based analysis techniques in the context of the electronics industry is presented. The electron-beam/specimen interactions that enable morphological, crystallographic and compositional characterization with modern TEMs are briefly reviewed. Diffraction contrast, lattice and energy filtered imaging; energy dispersive x-ray spectrometry (EDS), and electron energy loss spectrometry (EELS) are reviewed and discussed. These techniques are illustrated through specific applications and case studies in the electronics industry. Particular emphasis is placed on sample preparation concerns, which represent a practical limitation to an expanded role for TEM as a critical analytical tool for ULSI technology.

• OSTI ID: 21202326
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 449; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON BEAMS
ELECTRON DIFFRACTION
ELECTRONS
ENERGY LOSSES
ENERGY-LOSS SPECTROSCOPY
INTEGRATED CIRCUITS
INTERFACES
MICROELECTRONICS
SAMPLE PREPARATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTRA
X-RAY SPECTROSCOPY