Electron microscopy of semiconducting materials and ULSI devices. Materials Research Society symposium proceedings Volume 523

Conference · Wed Jul 01 04:00:00 EDT 1998

OSTI ID:20013783

Hayzelden, C; Hetherington, C; Ross, F ^[1]

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1. eds.

This volume brings together a mix of industrial users with university and government researchers, all sharing common interests in electron microscopy and materials for ultra-large-scale integration (ULSI) of electronic devices. The reduced dimensions of ULSI devices require not only new materials, microstructures and processing methods, but also advanced imaging and analytical techniques to monitor and assess device developments, and then troubleshoot during production. The volume begin with a discussion of the most important problem in applying transmission electron microscopy (TEM) to materials analysis--the preparation of high-quality thin foils--and continues with examples showing the great power of TEM in defect analysis. Applications of TEM and scanning electron microscopy (SEM) to the analysis of polycrystalline metal films, silicides and diffusion barriers are also discussed. Analytical TEM, use of energy-filtered imaging and field emission sources, and high-resolution SEM are featured. Overall, the volume provides an excellent balance of new techniques and real applications of established techniques. Topics include: specimen preparation and defect analysis in semiconducting devices; metallization, silicides and diffusion barriers; advanced characterization of ULSI structures; and semiconductor epitaxy and heterostructures.

• OSTI ID: 20013783
• Report Number(s): CONF-980405--; ISBN 1-55899-429-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CRYSTAL DEFECTS
ELECTRON MICROSCOPY
EPITAXY
FABRICATION
HETEROJUNCTIONS
INTEGRATED CIRCUITS
MICROSTRUCTURE
PROCEEDINGS
SAMPLE PREPARATION
SEMICONDUCTOR MATERIALS
SILICIDES