ULSI technology and materials: Quantitative answers by combined mass spectrometry surface techniques

Journal Article · Tue Nov 24 04:00:00 EST 1998 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.56924· OSTI ID:21202352

Bersani, M; Fedrizzi, M; Anderle, M ^[1]; Sbetti, M ^[2]

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1. ITC-IRST, 38050 Povo, Trento (Italy)
2. SGS-Thomson, 20041 Agrate Brianza, Milano (Italy)

The progressive microelectronics ULSI device shrinking towards improving the performances has driven the development of new materials and process technologies. A good example is given by oxynitride, an innovative material which is thought for the next generation of 0.25 {mu}m MOS circuits. Oxynitrides have replaced thermal silicon oxides as gate insulator due to the properties of good masking against impurity diffusion, together with the excellent dielectric strength and the better resistance to dielectric breakdown. The strong request from microelectronics industries for a complete and accurate characterization of this new material and the technological processes concerned, has considerably stimulated the research, particularly in the field of analytical methodology. Secondary Ion Mass Spectrometry, linked since the beginning with microelectronics development, shows again to be the most reliable and suitable microanalytical technique to give answers to this topics. In this work we present some examples of methodologies applied to an accurate quantitative characterization of this new material, together with its impact on the production processes. We show how the complementary employing of several mass spectrometry techniques, such as magnetic sector SIMS, SNMS and ToF-SIMS, can give a more complete overview both to process issues and to methodological developements of the techniques themselves.

• OSTI ID: 21202352
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 449; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
DIFFUSION
IMPURITIES
INTEGRATED CIRCUITS
ION MICROPROBE ANALYSIS
MASKING
MICROELECTRONICS
NITRIDES
PERFORMANCE
RESONANCE IONIZATION MASS SPECTROSCOPY
SILICON OXIDES
SURFACES
TIME-OF-FLIGHT METHOD