High piezoelectricity of Pb(Zr,Ti)O{sub 3}-based ternary compound thin films on silicon substrates

Journal Article · Mon Mar 23 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3103553· OSTI ID:21176059

Tao, Zhang; Shuyi, Zhang; Zhaojiang, Chen; Fengmei, Zhou; Zhongning, Zhang; Yuetao, Yang ^[1]; Wasa, Kiyotaka ^[1]

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1. Lab of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093 (China)

Pb(Zr,Ti)O{sub 3} (PZT)-based ternary compound thin films, 0.06PMnN-0.94PZT(50/50) (PMnN-PZT), are deposited on Si-based heterostructures by rf magnetron sputtering system. The intrinsic PZT(50/50) thin films are also deposited on the same kind of substrates for comparison. The PMnN-PZT thin films show the similar polycrystalline structures as those of PZT with highly (111) oriented perovskite phase. The PMnN-PZT thin films show excellent piezoelectricity and ferroelectricity which are distinctly better than those of PZT thin films prepared with the same deposition conditions. Besides, the cantilevers of PMnN-PZT thin films on the heterostructure substrates also exhibit higher sensitivities than the PZT thin film cantilevers.

• OSTI ID: 21176059
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
FERROELECTRIC MATERIALS
MAGNETRONS
PEROVSKITE
PIEZOELECTRICITY
POLYCRYSTALS
PZT
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS