Piezoelectric properties of c-axis oriented Pb(Zr,Ti)O{sub 3} thin films
- Human Environment Research Laboratory, Matsushita Electric Industrial Co., Ltd., Seikacho, Kyoto 619-02 (Japan)
Piezoelectric properties of the {ital c}-axis oriented Pb(Zr,Ti)O{sub 3} (PZT) thin films were investigated. The PZT films with a composition near the morphotropic phase boundary were epitaxially grown on (100)Pt-coated MgO substrates by rf-magnetron sputtering. The PZT films exhibited excellent ferroelectricity with a remanent polarization more than 50 {mu}C/cm{sup 2}. In order to examine intrinsic piezoelectric properties, cantilever structures were microfabricated with the PZT films. The piezoelectric coefficient d{sub 31} of PZT films, which were not subjected to poling treatments, was measured directly from the transverse expansion of the cantilever beams. The measurements revealed that the PZT films were naturally polarized and had a relatively large piezoelectric coefficient d{sub 31} of 100{times}10{sup {minus}12} m/V without poling. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 495236
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 11; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dielectric and piezoelectric properties of (x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-- (1-x)Pb(Zr{sub 1/2}Ti{sub 1/2})O{sub 3} thin films prepared by the sol--gel method
Characterization of Pb(Zr,Ti)O/sub 3/ thin films deposited from multielement metal targets