Highly oriented, chemically prepared Pb(Zr,Ti)O[sub 3] thin films
- Sandia National Labs., Albuquerque, NM (United States)
The authors have fabricated highly oriented, chemically prepared thin films of Pb(Zr[sub 0.40]Ti[sub 0.60])O[sub 3](PZT 40/60) on both insulating and conducting substrates. While (100) MgO single crystals were used as the insulating substrates, the conducting substrates were fabricated by RF magnetron sputter deposition of 100-nm-thick (100) Pt films onto (100) MgO substrates. For comparison, they also fabricated PZT 40/60 films that had no significant preferential orientation on platinized MgO substrates. Sputter deposition of an underlying amorphous Pt film was used to fabricate randomly oriented PZT 40/60 films. Highly (001) oriented PZT 40/60 films had higher remanent polarization (61 [mu]C/cm[sup 2] compared to 41 [mu]C/cm[sup 2]) and lower relative dielectric constant (368 compared to 466) than PZT 40/60 films that were randomly oriented.
- OSTI ID:
- 6460718
- Journal Information:
- Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 76:6; ISSN 0002-7820; ISSN JACTAW
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
360604 -- Materials-- Corrosion
Erosion
& Degradation
CHEMICAL PREPARATION
ELECTRICAL PROPERTIES
FABRICATION
FERROELECTRIC MATERIALS
FILMS
LEAD COMPOUNDS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PZT
SUBSTRATES
SYNTHESIS
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
USES
ZIRCONATES
ZIRCONIUM COMPOUNDS