Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

Journal Article · Mon Dec 08 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3037024· OSTI ID:21175806

Cai, Y; Wong, T L; Chan, S K; Sou, I K; Wang, N ^[1]; Su, D S ^[2]

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1. Department of Physics and the Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong (China)
2. Department of Inorganic Chemistry, Fritz-Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany)

Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.

• OSTI ID: 21175806
• Journal Information: Applied Physics Letters, Vol. 93, Issue 23; Other Information: DOI: 10.1063/1.3037024; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSIS
CRYSTAL GROWTH
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
VAPORS
ZINC SELENIDES