Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy

Journal Article · Mon Apr 11 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1897053· OSTI ID:20702304

Colli, A; Hofmann, S; Ferrari, A C; Ducati, C; Martelli, F; Rubini, S; Cabrini, S; Franciosi, A; Robertson, J ^[1]

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1. Department of Engineering, University of Cambridge, Cambridge CB2 1PZ (United Kingdom)

Single-crystal ZnSe nanowires are grown on a prepatterned gold catalyst by molecular-beam epitaxy. Optimum selectivity and maximum nanowire densities are obtained for growth temperatures in the range 400-450 deg. C, but gold-assisted growth is demonstrated for temperatures as low as 300 deg. C. This suggests a diffusion process on/through the catalyst particle in the solid state, in contrast to the commonly assumed liquid phase growth models. Straight wires, as thin as 10 nm, nucleate together with thicker and saw-like structures. A gold particle is always found at the tip in both cases.

• OSTI ID: 20702304
• Journal Information: Applied Physics Letters, Vol. 86, Issue 15; Other Information: DOI: 10.1063/1.1897053; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSTS
CRYSTAL GROWTH
DIFFUSION
GOLD
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NUCLEATION
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SURFACES
SYNTHESIS
TEMPERATURE RANGE 0400-1000 K
ZINC SELENIDES