Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate

Journal Article · Mon Oct 06 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2989128· OSTI ID:21175642

Yin, Z G; Chen, N F; Zhang, X W; Bai, Y M; Chai, C L ^[1]; Li, Y ^[2]; Xie, Y N; Zhang, J ^[3]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
2. Department of Engineering Science and Materials, University of Puerto Rico at Mayaguez, Mayaguez 00681-9044 (Puerto Rico)
3. Laboratory of Synchrotron Radiation, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)

We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy.

• OSTI ID: 21175642
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
COBALT
COBALT IONS
DEPOSITION
DOPED MATERIALS
ETCHING
FERROMAGNETIC MATERIALS
FERROMAGNETISM
MAGNETIC PROPERTIES
PRECIPITATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC OXIDES