Intrinsic Ferromagnetism Observed in ZnO Thin Film

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666550· OSTI ID:21612427

Wang, D F; Thuy, V T. T.; Kim, J M; Seo, M S; Lee, Y P ^[1]

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1. Department of Physics and Quantum Photonic Science Research Center, Hanyang University, Seoul 133-791 (Korea, Republic of)

A ZnO film was deposited on a silicon wafer by magnetron sputtering, and the magnetic and the electronic properties have been studied The magnetic property measurements show that the ZnO film is ferromagnetic at room temperature. Through the magnetoresistance (MR) measurement, it is found that ZnO reveals a negative MR at 80, 50, 20, 10 and 6 K, which is induced by the weak-localization effect. However, a positive MR as large as 19.8% was observed, when temperature was reduced to 2 K. As far as the mechanism of the huge positive MR is concerned, it is suggested to be due to the spin splitting induced by the s-d-like interaction. Through the discussion on the huge positive MR, we demonstrate that the observed ferromagnetism in ZnO is intrinsic, not from external impurities.

• OSTI ID: 21612427
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANGULAR MOMENTUM
CHALCOGENIDES
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
FILMS
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MAGNETISM
MAGNETORESISTANCE
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE PROPERTIES
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SPIN
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES