Room-temperature ferromagnetism in n-type Cu-doped ZnO thin films

Journal Article · Wed Aug 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2764203· OSTI ID:21057474

Hou, D L; Ye, X J; Zhao, X Y; Meng, H J; Zhou, H J; Li, X L; Zhen, C M ^[1]

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1. Department of Physics, Hebei Normal University, Shijiazhuang 050016 (China)

A series of n-type Cu-doped ZnO thin films was prepared by magnetron sputtering. Such films have shown ferromagnetic properties at room temperature. The Cu ion is in a univalent state as identified by x-ray photoelectron spectroscopy. The moment per Cu ion decreases as the Cu concentration increases. The largest moment about 0.52 {mu}{sub B}/Cu was observed for Zn{sub 0.95}Cu{sub 0.05}O thin film. The Curie temperature about 360 K was observed for Zn{sub 0.95}Cu{sub 0.05}O:N film. To explore the relationship between ferromagnetism and carrier density, nitrogen was introduced into the samples which resulted magnetization and the transition temperature decreasing. These results indicate that the electron density plays an important role in ferromagnetism.

• OSTI ID: 21057474
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
COPPER IONS
CRYSTAL GROWTH
CURIE POINT
DEPOSITION
DOPED MATERIALS
ELECTRON DENSITY
FERROMAGNETIC MATERIALS
FERROMAGNETISM
MAGNETIC MOMENTS
MAGNETIZATION
MAGNETRONS
NITROGEN
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES