Improved passivation of the ZnO/Si interface by pulsed laser deposition

Journal Article · Mon Jan 28 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4788675· OSTI ID:22102238

Gluba, M. A.; Nickel, N. H.; Rappich, J. ^[1]; Hinrichs, K. ^[2]

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1. Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut fuer Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)
2. Leibniz-Institut fuer Analytische Wissenschaften - ISAS - eV, Department Berlin, Albert-Einstein-Str. 9, D-12489 Berlin (Germany)

Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of Almost-Equal-To 10{sup 12} cm{sup -2}. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.

• OSTI ID: 22102238
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
DENSITY
ELLIPSOMETRY
ENERGY BEAM DEPOSITION
INFRARED SPECTRA
LASER RADIATION
MAGNETRONS
OXYGEN
PHOTOLUMINESCENCE
PULSED IRRADIATION
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
THIN FILMS
ZINC OXIDES