Luminescence properties of ZnO layers grown on Si-on-insulator substrates

Journal Article · Mon Oct 02 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2357870· OSTI ID:20860963

Kumar, Bhupendra; Gong, Hao; Vicknesh, S; Chua, S J; Tripathy, S ^[1]

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1. Department of Materials Science and Engineering, National University of Singapore, 119260 Singapore (Singapore)

The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E{sub 2}{sup high} optical phonon mode near 438 cm{sup -1} in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems.

• OSTI ID: 20860963
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
EV RANGE 01-10
EXCITONS
LAYERS
MICROELECTRONICS
PHONONS
PHOTOLUMINESCENCE
POLYCRYSTALS
RADIOWAVE RADIATION
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC OXIDES