Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Journal Article · Mon Apr 11 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1895480· OSTI ID:20702298

Hwang, Dae-Kue; Kim, Hyun-Sik; Lim, Jae-Hong; Oh, Jin-Yong; Yang, Jin-Ho; Park, Seong-Ju; Kim, Kyoung-Kook; Look, D C; Park, Y S ^[1]

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1. Department of Materials Science and Engineering and National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.

• OSTI ID: 20702298
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DOPED MATERIALS
EV RANGE 01-10
EXCITATION
EXCITONS
IMPURITIES
MEV RANGE 100-1000
PHOSPHORUS
PHOTOLUMINESCENCE
POWER DENSITY
RADIOWAVE RADIATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPECTRA
SPUTTERING
THIN FILMS
VALENCE
ZINC OXIDES