Photoluminescence Characterization of ZnO Thin Films Grown by RF- Sputtering

Journal Article · Wed Mar 30 04:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3573743· OSTI ID:21511545

Bakhori, S K. Mohd; Ng, S S; Ahmad, M A; Ahmad, H; Hassan, Z; Hassan, H Abu; Abdullah, M J ^[1]

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1. Nano-optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, USM, Penang (Malaysia)

This article presents photoluminescence (PL) characterization of ZnO thin films deposited by radio-frequency magnetron sputtering method on sapphire and n-type Si (100) substrates. PL measurements were carried out at room temperature to investigate the energy band gaps and optical quality of the ZnO thin films. In order to draw a specific picture of surface morphology of ZnO thin films, atomic force microscope images were taken. All the results were compared to the results obtained from the bulk ZnO sample. The results revealed that the energy band gap of ZnO thin films grown on n-type Si (100) is higher than ZnO on sapphire. However, energy band gap of bulk ZnO is higher compared to both ZnO on n-type Si (100) and sapphire (Al{sub 2}O{sub 3}). This is probably due to the crystalline quality because good crystallinity increases the radiation recombination and hence increase the intensity of the NBE emission.

• OSTI ID: 21511545
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1328; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ATOMIC FORCE MICROSCOPY
CHALCOGENIDES
CORUNDUM
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EMISSION
EQUIPMENT
FILMS
LUMINESCENCE
MAGNETRONS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
N-TYPE CONDUCTORS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
RADIATIONS
RADIOWAVE RADIATION
RECOMBINATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPUTTERING
SUBSTRATES
SURFACES
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES