Photoluminescence Properties of Ultra-high-quality ZnO Thin Films Grown by Sputtering Deposition

Journal Article · Thu Jun 30 04:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1994065· OSTI ID:20719088

Kim, D; Shimomura, T; Nakayama, M ^[1]

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1. Department of Applied Physics, Graduate School of Engineering, Osaka City University (Japan)

We have investigated photoluminescence properties of ultra-high quality ZnO thin films grown by an rf-magnetron sputtering method. From the results of x-ray diffraction patterns, we have found that a high growth temperature of {approx}600 degree sign C and the introduction of a low-temperature buffer layer are essential in the growth of the high-quality thin films. In photoluminescence (PL) spectra, the free exciton band is observed and the defect-related PL is negligibly weak, reflecting high crystallinity of the film. Furthermore, under high-density excitation conditions, a PL band due to an exciton-exciton scattering process, the so-called P emission, is observed.

• OSTI ID: 20719088
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 772; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
EXCITATION
EXCITONS
LAYERS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES