A comparative analysis of deep level emission in ZnO layers deposited by various methods

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3054175· OSTI ID:21185953

Ahn, Cheol Hyoun; Kim, Young Yi; Kim, Dong Chan; Mohanta, Sanjay Kumar; Cho, Hyung Koun ^[1]

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1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

This study examined the origin of visible luminescence from ZnO layers deposited on p-Si substrates by various growth methods using temperature dependent photoluminescence measurements. The deep level emissions of ZnO layers are found to be strongly dependent on the growth conditions and growth methods used. For the samples grown by sputtering, the visible emission consisted of violet, green, and orange-red regions, which corresponded to zinc interstitial (Zn{sub i}), oxygen vacancy (V{sub O}), and oxygen interstitial (O{sub i}) defect levels, respectively. In contrast, the deep level emissions of metal organic chemical vapor deposition grown samples consisted of blue and green emissions and blue and orange-red emissions at low and high oxygen flow rates, respectively. The ZnO nanorods synthesized by thermal evaporation showed a dominant deep level emission at the green region, which is associated with oxygen vacancies (V{sub O})

• OSTI ID: 21185953
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
EVAPORATION
FLOW RATE
INTERSTITIALS
LAYERS
NANOSTRUCTURES
ORGANOMETALLIC COMPOUNDS
OXYGEN
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
VACANCIES
VACUUM COATING
ZINC
ZINC OXIDES