Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon

Journal Article · Mon Sep 08 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2979686· OSTI ID:21175576

Di, Z F; Wang, Y Q; Nastasi, M ^[1]; Shao, L ^[2]; Lee, J K ^[3]; Theodore, N D ^[4]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Department of Nuclear Engineering, Texas A and M University, 3133 TAMU, College Station, Texas 77843 (United States)
3. Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15261 (United States)
4. Analog and Mixed-Signal Technologies, Freescale Semiconductor Inc., Tempe, Arizona 85284 (United States)

We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VH{sub x} and IH{sub x}), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon.

• OSTI ID: 21175576
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CHEMICAL BONDS
CRYSTALS
DISSOCIATION
HYDROGEN
HYDROGEN IONS
ION IMPLANTATION
IRRADIATION
SEMICONDUCTOR MATERIALS
SILICON
VACANCIES