Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

Journal Article · Sat Jan 15 04:00:00 EST 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.83.045204· OSTI ID:21538066

Dixit, S K ^[1]; Luepke, G ^[2]; Tolk, N H ^[3]; Feldman, L C ^[3]

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1. Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, Tennessee 37235 (United States)
2. Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187 (United States)
3. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)

We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature {sup 3}He ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.

• OSTI ID: 21538066
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 4 Vol. 83; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BARYONS
CHARGED PARTICLES
COMPLEXES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISSOCIATION
ELEMENTARY PARTICLES
ELEMENTS
EVEN-ODD NUCLEI
FERMIONS
HADRONS
HEAT TREATMENTS
HELIUM 3
HELIUM ISOTOPES
HYDROGEN COMPLEXES
INTERSTITIALS
ION IMPLANTATION
IONS
IRRADIATION
ISOTOPES
LIGHT NUCLEI
MATERIALS
NANOSTRUCTURES
NUCLEI
NUCLEONS
PHOTOELECTRIC EFFECT
PHOTOVOLTAIC EFFECT
POINT DEFECTS
PROTONS
RELIABILITY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPLEXES
STABLE ISOTOPES
TAIL IONS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
VACANCIES