IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te epilayer grown by molecular beam epitaxy

Journal Article · Fri Feb 29 23:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2871193· OSTI ID:21133975

Fukuma, Y ^[1]; Goto, K; Senba, S ^[2]; Miyawaki, S; Asada, H; Koyanagi, T ^[3]; Sato, H ^[4]

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1. Yamaguchi Prefectural Industrial Technology Institute, 4-1 Asutopia, Ube 755-0195 (Japan)
2. Ube National College of Technology, 2-14-1 Tokiwadai, Ube 755-8555 (Japan)
3. Department of Symbiotic Environmental Systems Engineering, Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611 (Japan)
4. Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-8526 (Japan)

Growth of the IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te by molecular beam epitaxy is reported. The epitaxial growth of Ge{sub 1-x}Mn{sub x}Te (x=0.13) on BaF{sub 2} (111) with a GeTe buffer layer is confirmed by x-ray diffraction and reflection high-energy electron diffraction. The ferromagnetic order is clearly established by the magnetization and magnetotransport measurements. The Curie temperature of 100 K is obtained for the hole concentration of 7.86x10{sup 20} cm{sup -3}. The existence of the strong p-d exchange which gives rise to the ferromagnetic order is revealed by the hard x-ray photoemission measurements.

• OSTI ID: 21133975
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM FLUORIDES
CRYSTAL GROWTH
CURIE POINT
ELECTRON DIFFRACTION
FERROMAGNETISM
GERMANIUM TELLURIDES
HARD X RADIATION
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MANGANESE TELLURIDES
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
TEMPERATURE RANGE 0065-0273 K
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY