Compositional dependencies of ferromagnetic Ge{sub 1-x}Mn{sub x}Te grown by solid-source molecular-beam epitaxy
- Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)
The IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te thin films on BaF{sub 2} (111) substrate have been prepared using solid-source molecular-beam epitaxy technique by varying the Mn concentrations from x=0.25 to 0.98. The chemical Mn concentration was determined by x-ray photoelectron spectroscopy measurement. The in situ reflection high-energy electron diffraction pattern indicates that the growth mechanism is in the island-growth mode. The x-ray diffraction shows that the Ge{sub 1-x}Mn{sub x}Te films crystallize in the NaCl phase with (111) orientation. A clear ferromagnetic ordering is observed in the detailed temperature-dependent magnetization measurement for 0.25<x<0.98. The dependence of Curie temperature T{sub C} on Mn concentration x tends to follow a quadratic behavior. This phenomenon can be attributed to the increase of antiferromagnetic interaction since MnTe is an antiferromagnet.
- OSTI ID:
- 20788116
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANTIFERROMAGNETIC MATERIALS
ANTIFERROMAGNETISM
BARIUM FLUORIDES
CRYSTAL GROWTH
CURIE POINT
ELECTRON DIFFRACTION
FERROMAGNETIC MATERIALS
GERMANIUM COMPOUNDS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MANGANESE TELLURIDES
MOLECULAR BEAM EPITAXY
SODIUM CHLORIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY