Epitaxial growth of diluted magnetic semiconductor Ge{sub 1−x}Cr{sub x}Te with high Cr composition
- Frontier Research Academy for Young Researchers, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502 (Japan)
- Department of Electronic Devices Engineering, Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611 (Japan)
- National College of Technology, Ube College, 2-14-1 Tokiwadai, Ube 755-8555 (Japan)
IV–VI diluted magnetic semiconductor Ge{sub 1−x}Cr{sub x}Te layers up to x = 0.1 were grown on SrF{sub 2} substrates by molecular beam epitaxy. In situ reflection high-energy electron diffraction shows a streaky pattern with a sixfold symmetry in the plane for the Ge{sub 1−x}Cr{sub x}Te layer, implying an epitaxial growth of Ge{sub 1−x}Cr{sub x}Te (111)/SrF{sub 2} (111). A clear hysteresis loop is observed in the anomalous Hall effect measurements due to the strong spin-orbit interaction in the host GeTe. The Curie temperature increases with increasing Cr composition up to 200 K, but there is no clear dependence of the Curie temperature on the hole concentration, implying that the mechanism of the ferromagnetic interaction among Cr ions is different from Mn doped diluted magnetic semiconductors.
- OSTI ID:
- 22590732
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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