Growth and magnetic properties of IV-VI diluted magnetic semiconductor Ge{sub 1-x}Cr{sub x}Te

Journal Article · Sat Apr 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2163830· OSTI ID:20788114

Fukuma, Y; Taya, T; Miyawaki, S; Irisa, T; Asada, H; Koyanagi, T ^[1]

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1. Yamaguchi Prefectural Industrial Technology Institute, 4-1 Asutopia, Ube 755-0195 (Japan)

IV-VI diluted magnetic semiconductor Ge{sub 1-x}Cr{sub x}Te films were grown on BaF{sub 2} substrates by molecular-beam epitaxy. The Ge{sub 1-x}Cr{sub x}Te film up to x=0.103 is single phase as determined by reflection high-energy electron diffraction and x-ray diffraction measurements. The optical band gap decreases with increasing Cr composition. Ferromagnetic order of the Ge{sub 1-x}Cr{sub x}Te films is characterized by direct magnetization and anomalous Hall effect measurements.

• OSTI ID: 20788114
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM FLUORIDES
CHROMIUM COMPOUNDS
CRYSTAL GROWTH
ELECTRON DIFFRACTION
ENERGY GAP
FERROMAGNETIC MATERIALS
FILMS
GERMANIUM COMPOUNDS
HALL EFFECT
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MOLECULAR BEAM EPITAXY
SUBSTRATES
TELLURIUM COMPOUNDS
X-RAY DIFFRACTION