The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures

Journal Article · Tue May 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607050144· OSTI ID:21088063

Litovchenko, P G ^[1]; Politanska, O A; Sydor, O N; Katerynchuk, V N ^[2]; Lastovetsky, V F; Litovchenko, O P; Dubovoy, V K; Polivtsev, L A ^[1]

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1. National Academy of Sciences of Ukraine, Institute of Nuclear Research (Ukraine)
2. National Academy of Sciences of Ukraine, Chernovtsy Branch, Frantsevich Institute of Problems in Materials Science (Ukraine)

The effect of 1-MeV neutrons on the photoelectric parameters of ITO-GaSe heterostructures was studied. It is shown that the observed variations in the current-voltage characteristics are caused by the effect of penetrating radiation on both components of the structure, which brings about an increase in the resistance of the heterostructures. The presence of exciton fine structure in the photosensitivity spectra after irradiation indicates that GaSe retains high structural quality notwithstanding the introduced radiation defects. The results obtained are accounted for by spatial redistribution of doping impurity in GaSe and structural changes in the ITO films.

• OSTI ID: 21088063
• Journal Information: Semiconductors, Vol. 41, Issue 5; Other Information: DOI: 10.1134/S1063782607050144; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FILMS
FINE STRUCTURE
GALLIUM SELENIDES
IRRADIATION
MEV RANGE 01-10
NEUTRON BEAMS
NEUTRONS
PHOTOSENSITIVITY
PHYSICAL RADIATION EFFECTS
SPECTRA