Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons

Journal Article · Sat Nov 15 00:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608110092· OSTI ID:21255564

Politanska, O A; Sydor, O N ^[1]; Maslyuk, V T ^[2]

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1. National Academy of Sciences of Ukraine, Chernivtsi Division, Frantsevich Institute for Problems in Materials Science (Ukraine)
2. National Academy of Sciences of Ukraine, Institute of Electron Physics (Ukraine)

The effect of irradiation with 12.5-MeV electrons on the electrical and photoelectric parameters of layered photoconverters based on p-InSe-n-InSe and p-GaSe-n-InSe structures is studied. The observed variations in the current-voltage characteristics, photoresponse spectra, open-circuit voltage, and short-circuit current are caused by the formation of point defects. The absence of pronounced changes in the characteristics of the homojunctions and heterojunctions even after irradiation at the highest dose makes it possible to recommend these junctions for use in the fabrication of radiation-resistant photodetectors.

• OSTI ID: 21255564
• Journal Information: Semiconductors, Vol. 42, Issue 11; Other Information: DOI: 10.1134/S1063782608110092; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC POTENTIAL
ELECTRON BEAMS
FABRICATION
GALLIUM SELENIDES
HETEROJUNCTIONS
HOMOJUNCTIONS
INDIUM SELENIDES
IRRADIATION
MEV RANGE 10-100
PHOTODETECTORS
POINT DEFECTS
RADIATION DOSES
SEMICONDUCTOR MATERIALS
SPECTRA