Characteristics of the oxide-p-InSe heterojunctions exposed to irradiation with X-ray photons
- National Academy of Sciences of Ukraine, Frantsevich Institute of Problems in Materials Science (Ukraine)
- Fed'kovich National University (Ukraine)
It is established that the characteristic X-ray radiation (with the wavelength {lambda} = 0.056 nm) affects the photoelectric parameters of heterojunctions formed of the native thermal oxide and p-InSe. The current-voltage and spectral characteristics of the structure prior to and after irradiation are studied. The observed variations in the open-circuit voltage, short-circuit current, current-voltage characteristics, and the photosensitivity spectra of heterojunctions are caused by formation of radiation defects in InSe. These defects bring about an increase in the rate of recombination processes in the charge-transport mechanisms, slightly affect the surface-recombination rate, and do not exert a destructive effect on the value of the contact-difference potentials. The results obtained are accounted for in the context of an electrostatic model of formation of radiation defects in the crystal lattice.
- OSTI ID:
- 21088493
- Journal Information:
- Semiconductors, Vol. 40, Issue 8; Other Information: DOI: 10.1134/S1063782606080094; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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