Influence of technological defects on the optical and photoelectric properties of AgCd{sub 2-x}Mn{sub x}GaSe{sub 4} alloys
- Lesya Ukrainka Volyn National University (Ukraine)
The study is concerned with the photoelectric and optical properties of a AgCd{sub 2-x}Mn{sub x}GaSe{sub 4} alloy with a Mn {yields} Cd isovalent substitution. The positions of the photoconductivity and photoluminescence peaks are determined, and the band gap of the alloy is estimated, based on compositional analysis. The influence of technological defects on specific features of the alloy's photoelectric and optical properties is analyzed. It is established that the centers controlling the alloy crystals' photosensitivity are cation vacancies. The photoluminescence centers responsible for emission at awavelengths from 0.77 to 0.88 {mu}m (dependent on the relation between components in the alloy) are defect complexes consisting of cation and anion vacancies. A physically consistent model is proposed to interpret the effects observed in the alloy.
- OSTI ID:
- 22039024
- Journal Information:
- Semiconductors, Vol. 46, Issue 3; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoelectric properties of polycrystalline Cd{sub x}Hg{sub 1-x}Te layers on sapphire
Structural features of AgCaCdMg{sub 2}(PO{sub 4}){sub 3} and AgCd{sub 2}Mg{sub 2}(PO{sub 4}){sub 3}, two new compounds with the alluaudite-type structure, and their catalytic activity in butan-2-ol conversion