Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with {gamma}-ray photons

Journal Article · Thu May 15 04:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608050151· OSTI ID:21087871

Indutnii, I Z ^[1]; Muravskaya, M V ^[2]; Voitovich, V V ^[1]; Gule, E G; Shepelyavyi, P E ^[2]

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1. National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)
2. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO{sub 2} structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation ({sup 60}Co) in the dose range D= 10{sup 4}-10{sup 7} rad are studied. It is shown for the first time that low radiation doses (5 x 10{sup 3} rad < D < 10{sup 5} rad) lead to significant (as large as 40%) increases in the intensity of the photoluminescence band at 1.33 eV. The infrared spectra indicate that there is no variation in the composition and structure of the nanocomposite. The observed effect is accounted for by structural ordering of the nanocrystal-matrix interface; this ordering is stimulated by low-dose irradiation, i.e., removal of defects (recombination centers) at the nc-Si/SiO{sub 2} interfaces and resulting enhancement of the radiative-recombination channel.

• OSTI ID: 21087871
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT 60
CRYSTALS
GAMMA RADIATION
INFRARED SPECTRA
LOW DOSE IRRADIATION
NANOSTRUCTURES
PHOTOLUMINESCENCE
RADIATION DOSES
SILICON
SILICON OXIDES