Photoluminescence of nanocrystalline silicon films formed by pulsed laser-assisted deposition with the introduction of carbon

Journal Article · Sat Apr 15 04:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606040130· OSTI ID:21088561

Lisovskii, I P; Manoilov, E G; Zlobjn, S A ^[1]

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1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

The effect of carbon on the photoluminescent properties of films consisting of quantum-dimensional Si nanocrystals in the SiO{sub x} (x {sup {yields}} 2) matrix is studied. The spectra of time-resolved photoluminescence in the photon-energy range of 1.4-3.2 eV and the infrared-absorption spectra in the wave-number range of 650-1500 cm{sup -1} were measured. It is established that the introduction of carbon in the presence of oxygen in the course of the pulsed laser-assisted deposition of the films brings about the white-blue emission spectrum and also an increase in the intensity and stability of photoluminescence. The effect of carbon on the photoluminescent properties of the films is related to the formation of the SiO{sub 2} barrier phase instead of SiO{sub x} (1 < x < 2), saturation of silicon dangling bonds at the surface of Si nanocrystals with larger sizes, and mechanical strengthening of Si nanocrystals with smaller sizes.

• OSTI ID: 21088561
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
CARBON
CRYSTALS
DEPOSITION
EMISSION SPECTRA
EV RANGE 01-10
FILMS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SILICA
SILICON
SILICON OXIDES
STABILITY
SURFACES
TIME RESOLUTION