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Title: Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Abstract

We investigate the structural and optical properties of GeO/SiO{sub 2} multilayers obtained by evaporation of GeO{sub 2} and SiO{sub 2} powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  2. Université de Lorraine, Institut Jean Lamour UMR CNRS 7198 (France)
Publication Date:
OSTI Identifier:
22471935
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 121; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; EVAPORATION; GERMANATES; GERMANIUM; GERMANIUM OXIDES; GERMANIUM SILICIDES; LAYERS; MATRIX MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POWDERS; SILICATES; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Volodin, V. A., E-mail: volodin@isp.nsc.ru, Gambaryan, M. P., Cherkov, A. G., Vdovin, V. I., Stoffel, M., Rinnert, H., and Vergnat, M.. Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix. United States: N. p., 2015. Web. doi:10.1134/S1063776115130063.
Volodin, V. A., E-mail: volodin@isp.nsc.ru, Gambaryan, M. P., Cherkov, A. G., Vdovin, V. I., Stoffel, M., Rinnert, H., & Vergnat, M.. Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix. United States. doi:10.1134/S1063776115130063.
Volodin, V. A., E-mail: volodin@isp.nsc.ru, Gambaryan, M. P., Cherkov, A. G., Vdovin, V. I., Stoffel, M., Rinnert, H., and Vergnat, M.. 2015. "Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix". United States. doi:10.1134/S1063776115130063.
@article{osti_22471935,
title = {Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix},
author = {Volodin, V. A., E-mail: volodin@isp.nsc.ru and Gambaryan, M. P. and Cherkov, A. G. and Vdovin, V. I. and Stoffel, M. and Rinnert, H. and Vergnat, M.},
abstractNote = {We investigate the structural and optical properties of GeO/SiO{sub 2} multilayers obtained by evaporation of GeO{sub 2} and SiO{sub 2} powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.},
doi = {10.1134/S1063776115130063},
journal = {Journal of Experimental and Theoretical Physics},
number = 6,
volume = 121,
place = {United States},
year = 2015,
month =
}
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