Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776115130063· OSTI ID:22471935

Gambaryan, M. P.; Cherkov, A. G.; Vdovin, V. I. ^[1]; Stoffel, M.; Rinnert, H.; Vergnat, M. ^[2]

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1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
2. Université de Lorraine, Institut Jean Lamour UMR CNRS 7198 (France)

We investigate the structural and optical properties of GeO/SiO{sub 2} multilayers obtained by evaporation of GeO{sub 2} and SiO{sub 2} powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.

• OSTI ID: 22471935
• Journal Information: Journal of Experimental and Theoretical Physics, Vol. 121, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
EVAPORATION
GERMANATES
GERMANIUM
GERMANIUM OXIDES
GERMANIUM SILICIDES
LAYERS
MATRIX MATERIALS
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POWDERS
SILICATES
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY