Photoluminescence of as-grown and thermal annealed SiO{sub x}/Si-nanocrystals heterolayers grown by reactive rf sputtering

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3506424· OSTI ID:21476615

Mota-Pineda, E ^[1]; Melendez-Lira, M ^[2]; Zapata-Torres, M ^[3]; Angel, P del ^[4]; Perez-Centeno, A; Santana-Aranda, M A ^[5]; Jimenez-Sandoval, S ^[6]

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1. Departamento de Matematicas, ESIME ZAC IPN, Unidad Adolfo Lopez Mateos, Mexico D.F. 07738 (Mexico)
2. Departamento de Fisica, CINVESTAV-IPN, Apdo. 17-740 Mexico D.F. 07000 (Mexico)
3. CICATA-IPN, Unidad Legaria, Legaria 694 Col. Irrigacion, Del. Miguel Hidalgo, Mexico D.F. 11500 (Mexico)
4. Instituto Mexicano del Petroleo, Direccion de Investigacion y Posgrado, Eje Central L. Cardenas 152, Mexico D.F. 07730 (Mexico)
5. Departamento de Fisica, CUCEI, Universidad de Guadalajara, Blvd. Marcelino Garcia Barragan 1421, Guadalajara, Jal. 44430 (Mexico)
6. CINVESTAV-IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro. 76001 (Mexico)

SiO{sub x}/Si-nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO{sub 2} layers and affect the Si NCs layer giving place to SiO{sub x}/Si NCs (1.64<x<2) interfaces. All as-grown samples showed strong photoluminescence (PL) bands in the visible and near-infrared regions; transmission electron microscopy measurements confirmed the presence of Si NCs. Thermal annealing at 1100 deg. C promoted the SiO{sub 2} stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

• OSTI ID: 21476615
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 9; Other Information: DOI: 10.1063/1.3506424; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CRYSTALLIZATION
DEPOSITION
EMISSION SPECTROSCOPY
INFRARED SPECTRA
INTERFACES
LAYERS
NANOSTRUCTURES
OXYGEN
PARTIAL PRESSURE
PHOTOLUMINESCENCE
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
STOICHIOMETRY
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
CHALCOGENIDES
ELECTRON MICROSCOPY
ELEMENTS
EMISSION
HEAT TREATMENTS
LUMINESCENCE
MATERIALS
MICROSCOPY
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHOTON EMISSION
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY
THERMODYNAMIC PROPERTIES