Photoluminescence of as-grown and thermal annealed SiO{sub x}/Si-nanocrystals heterolayers grown by reactive rf sputtering
- Departamento de Matematicas, ESIME ZAC IPN, Unidad Adolfo Lopez Mateos, Mexico D.F. 07738 (Mexico)
- Departamento de Fisica, CINVESTAV-IPN, Apdo. 17-740 Mexico D.F. 07000 (Mexico)
- CICATA-IPN, Unidad Legaria, Legaria 694 Col. Irrigacion, Del. Miguel Hidalgo, Mexico D.F. 11500 (Mexico)
- Instituto Mexicano del Petroleo, Direccion de Investigacion y Posgrado, Eje Central L. Cardenas 152, Mexico D.F. 07730 (Mexico)
- Departamento de Fisica, CUCEI, Universidad de Guadalajara, Blvd. Marcelino Garcia Barragan 1421, Guadalajara, Jal. 44430 (Mexico)
- CINVESTAV-IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro. 76001 (Mexico)
SiO{sub x}/Si-nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO{sub 2} layers and affect the Si NCs layer giving place to SiO{sub x}/Si NCs (1.64<x<2) interfaces. All as-grown samples showed strong photoluminescence (PL) bands in the visible and near-infrared regions; transmission electron microscopy measurements confirmed the presence of Si NCs. Thermal annealing at 1100 deg. C promoted the SiO{sub 2} stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.
- OSTI ID:
- 21476615
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CHALCOGENIDES
CRYSTALLIZATION
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTS
EMISSION
EMISSION SPECTROSCOPY
HEAT TREATMENTS
INFRARED SPECTRA
INTERFACES
LAYERS
LUMINESCENCE
MATERIALS
MICROSCOPY
NANOSTRUCTURES
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PARTIAL PRESSURE
PHASE TRANSFORMATIONS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PLASMA
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
SPECTROSCOPY
SPUTTERING
STOICHIOMETRY
SYNTHESIS
THERMODYNAMIC PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY