Adsorption-controlled molecular-beam epitaxial growth of BiFeO{sub 3}

Journal Article · Mon Aug 13 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2767771· OSTI ID:21016099

Ihlefeld, J F; Kumar, A; Gopalan, V; Schlom, D G; Chen, Y B; Pan, X Q; Heeg, T; Schubert, J; Ke, X; Schiffer, P; Orenstein, J; Martin, L W; Chu, Y H; Ramesh, R ^[1]

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1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802-5005 (United States)

BiFeO{sub 3} thin films have been deposited on (111) SrTiO{sub 3} single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO{sub 3} to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007 deg.). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

• OSTI ID: 21016099
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
ANTIFERROMAGNETIC MATERIALS
BISMUTH
BISMUTH OXIDES
CRYSTAL GROWTH
CRYSTALLOGRAPHY
FERROELECTRIC MATERIALS
HARMONIC GENERATION
IRON OXIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NEUTRON DIFFRACTION
STOICHIOMETRY
STRONTIUM TITANATES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VAPOR PRESSURE
X-RAY DIFFRACTION