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Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2901160· OSTI ID:21101983
 [1]; ; ;  [1]; ; ;  [2]; ;  [3]; ;  [4]; ;  [5];  [6]
  1. Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996 (United States)
  3. Institute for Bio- and Nano-Systems (IBN1-IT), Research Centre Juelich, D-52425 Juelich (Germany)
  4. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48019 (United States)
  5. Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)
  6. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO{sub 3} films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with {omega} rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 deg.). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO{sub 3} films.
OSTI ID:
21101983
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 92; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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