Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy
- Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996 (United States)
- Institute for Bio- and Nano-Systems (IBN1-IT), Research Centre Juelich, D-52425 Juelich (Germany)
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48019 (United States)
- Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO{sub 3} films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with {omega} rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 deg.). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO{sub 3} films.
- OSTI ID:
- 21101983
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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