Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.
- University of California, Berkeley, CA
- Institute for Crystal Growth, Berlin (Adlershof), Germany
- Georgia Institute of Technology, Atlanta, GA
- Penn State University, University Park, PA
- Cornell University, Ithaca, NY
BiFeO3 thin films have been deposited on (101) DyScO3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds. Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3/(100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [1120] BiFeO3 [1120] GaN (SiC) plus a twin variant related by a 180{sup o} in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 948663
- Report Number(s):
- SAND2008-5606J
- Journal Information:
- Proposed for publciation in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control., Journal Name: Proposed for publciation in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control.
- Country of Publication:
- United States
- Language:
- English
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