In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

Journal Article · Mon Jan 22 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2432293· OSTI ID:20971783

Schoermann, J; Potthast, S; As, D J; Lischka, K ^[1]

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1. Department of Physics, University of Paderborn, Warburger Strasse 100, D-33095 Paderborn (Germany)

Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth. Using the intensity of the electron beam as a probe, optimum growth conditions of c-GaN were found when a 1 ML Ga coverage is formed at the surface. 1 {mu}m thick c-GaN layers had a minimum surface roughness of 2.5 nm when a Ga coverage of 1 ML was established during growth. These samples revealed also a minimum full width at half maximum of the (002) rocking curve.

• OSTI ID: 20971783
• Journal Information: Applied Physics Letters, Vol. 90, Issue 4; Other Information: DOI: 10.1063/1.2432293; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRON BEAMS
ELECTRON DIFFRACTION
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NEUTRON DIFFRACTION
PLASMA
REFLECTION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SUBSTRATES