Near ultraviolet emission from nonpolar cubic Al{sub x}Ga{sub 1-x}N/GaN quantum wells

Journal Article · Mon Sep 25 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2357587· OSTI ID:20860929

Schoermann, J; Potthast, S; As, D J; Lischka, K ^[1]

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1. Department of Physics, University of Paderborn, Warburger Strasse 100, D-33095 Paderborn (Germany)

In this contribution the authors studied the optical properties of cubic Al{sub x}Ga{sub 1-x}N/GaN single and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. They observe strong room temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson-Schroedinger model calculation.

• OSTI ID: 20860929
• Journal Information: Applied Physics Letters, Vol. 89, Issue 13; Other Information: DOI: 10.1063/1.2357587; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
EV RANGE 01-10
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PLASMA
QUANTUM WELLS
REFLECTION
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION