Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge
- SWAMP Center, University of Florida, 525 New Engineering Bldg., PO Box 116130, Gainesville, FL 32611-6130 (United States)
Ge implanted with 1 MeV Si{sup +} at a dose of 1x10{sup 15} cm{sup -2} creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects-end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar (311) defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550 deg. C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.
- OSTI ID:
- 20960181
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 90; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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