The photoluminescence and optical constant of ZnSe/SiO{sub 2} thin films prepared by sol-gel process

Journal Article · Thu Dec 14 04:00:00 EST 2006 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2006.04.013· OSTI ID:20895209

Haiqing, Jiang ^[1]; Xi, Yao ^[1]; Jun, Che ^[1]; Min-qiang, Wang ^[1]

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1. Electronic Material Research Laboratory, Key Laboratory of Education Ministry, Xi'an Jiaotong University, Xi'an 710049 (China)

In this paper, ZnSe/SiO{sub 2} thin films were prepared by sol-gel process. X-ray diffraction results indicate that the phase structure of ZnSe particles embedded in SiO{sub 2} thin films is sphalerite (cubic ZnS). The dependence of ellipsometric angle {psi} on wavelength {lambda} of ZnSe/SiO{sub 2} thin films was investigated by spectroscopic ellipsometers. The optical constant, thickness, porosity and the concentration of ZnSe/SiO{sub 2} composite thin films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO{sub 2} thin films was also measured by surface profile. The photoluminescence properties of ZnSe/SiO{sub 2} thin films were investigated by fluorescence spectrometer. The photoluminescence results reveal that the emission peak at 487 nm (2.5 eV) excited by 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal (2.58 eV). Strong free exciton emission and other emission peaks corresponding to ZnSe lattice defects are also observed.

• OSTI ID: 20895209
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 12 Vol. 41; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTALS
ELLIPSOMETERS
EV RANGE 01-10
EXCITONS
FLUORESCENCE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POROSITY
SEMICONDUCTOR MATERIALS
SILICA
SILICON OXIDES
SOL-GEL PROCESS
SPECTROMETERS
SULFIDE MINERALS
THICKNESS
THIN FILMS
WAVELENGTHS
X-RAY DIFFRACTION
ZINC SELENIDES
ZINC SULFIDES