An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses

Journal Article · Tue Sep 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615090250· OSTI ID:22469799

The photoluminescence and photoluminescence excitation spectra of SiO{sub 2} films implanted with high (3 at %) Si{sup +}-ion doses are studied in relation to the temperature of postimplantation annealing. It is shown that two photoluminescence bands with peaks at 2.7 and 2 eV are dominant in the spectra. As the annealing temperature is increased, the relation between the intensities of the 2.7 and 2 eV bands changes in favor of the former one. Both of the photoluminescence bands have their main excitation peak at the energy 5.1 eV. The excitation spectrum of the ∼2-eV band exhibits also peaks at 3.8 and 4.6 eV. It is concluded that, in the implanted SiO{sub 2} films, the orange photoluminescence band originates from radiative transitions between levels of centers associated with a deficiency of oxygen (≡Si–Si≡ or =Si:) and the levels of nonbridging oxygen (≡Si–O•)

• OSTI ID: 22469799
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
ABSORPTION SPECTROSCOPY
ANNEALING
EMISSION SPECTRA
EMISSION SPECTROSCOPY
EV RANGE
EXCITATION
FILMS
ION IMPLANTATION
OXYGEN
PHOTOLUMINESCENCE
SILICON IONS
SILICON OXIDES