Optical characterization of CuInSe{sub 2} grown by molecular beam epitaxy

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208025

Niki, S; Makita, Y; Yamada, A; Shibata, H; Fons, P J; Obara, A ^[1]; Kurafuji, T; Chichibu, S; Nakanishi, H ^[2]

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1. MITI, Tsukuba, Ibaraki (Japan). Electrotechnical Lab.
2. Science Univ. of Tokyo (Japan)

CuInSe{sub 2} epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CuInSe{sub 2} is also determined to be E{sub g} = 1.0462eV at 2K.

• OSTI ID: 208025
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GRADED BAND GAPS
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
MATERIALS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SPECTRAL RESPONSE