Preparation of high-quality CuInSe{sub 2} thin films by molecular beam epitaxy

Conference · Wed Dec 30 23:00:00 EST 1998

OSTI ID:323658

Tseng, B H; Lin, S B; Yang, D J ^[1]

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1. National Sun Yat-Sen Univ., Kaohsiung (Taiwan, Province of China). Inst. of Materials Science and Engineering

CuInSe{sub 2} epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. The authors also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

• OSTI ID: 323658
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
GALLIUM ARSENIDES
HEAT TREATMENTS
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES