Growth and characterization of CuInSe{sub 2} epitaxial films for device applications
- MITI, Tsukuba, Ibaraki (Japan)
CuInSe{sub 2} (CIS) epitaxial layers have been grown on both GaAs (001) and In{sub 0.29}Ga{sub 0.71}As pseudo lattice-matched substrates by molecular beam epitaxy, and characterized for device applications. Despite a large lattice mismatch of {Delta}a/a{approximately}2.2%, epitaxial growth of CuInSe{sub 2} has been demonstrated on GaAs (001) showing their film properties strongly dependent on the Cu/In ratio. In-rich films had a large number of twins on {l_brace}112{r_brace} planes, and were found to be heavily compensated. On the other hand, Cu-rich films showed distinct photoluminescence emissions indicating significantly higher film quality in comparison with In-rich films. Two dimensional reciprocal x-ray intensity area mapping and cross-sectional transmission electron microscopy showed the formation of an interfacial layer in the vicinity of the CuInSe{sub 2}/GaAs interface resulting from the strain-induced interdiffusion between CuInSe{sub 2} and GaAs. Reduction in lattice mismatch to {Delta}a/a{approximately}0.2% by using In{sub 0.29}Ga{sub 0.71}As pseudo lattice-matched substrates made possible the growth of high quality CuInSe{sub 2} with predominant free exciton emissions in their photoluminescence spectra and with residual defect densities of as low as p {approximately} 1 {times} 10{sup 17}cm{sup {minus}3} implying the growth of device quality CuInSe{sub 2} epitaxial films.
- OSTI ID:
- 417682
- Report Number(s):
- CONF-960401--; ISBN 1-55899-329-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
COPPER SELENIDES
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELECTRON MICROPROBE ANALYSIS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HALL EFFECT
INDIUM ARSENIDES
INDIUM SELENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SOLAR CELLS
STRAINS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION