The growth of heteroepitaxial CuInSe{sub 2} on free-standing N-polar GaN

Journal Article · Mon Dec 15 04:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4904030· OSTI ID:22420200

Shih, Cheng-Hung ^[1]; Lo, Ikai; You, Shuo-Ting; Tsai, Cheng-Da ^[2]; Tseng, Bae-Heng; Chen, Yun-Feng; Chen, Chiao-Hsin ^[3]; Lee, Chuo-Han; Lee, Wei-I ^[4]; Hsu, Gary Z. L. ^[5]

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1. Multidisciplinary Science Research Center, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
2. Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
3. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
4. Department of Electrophysics, National Chiao Tung University, Taiwan ROC (China)
5. United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan ROC (China)

We report that chalcopyrite CuInSe{sub 2} thin films were grown on free-standing N-polar GaN (0001{sup -}) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe{sub 2} thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe{sub 2} (112) film on N-polar GaN. Microstructure analysis of the CuInSe{sub 2 } showed that the large lattice mismatch (28.5%) between CuInSe{sub 2 } and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe{sub 2} and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe{sub 2} thin film, which exhibits a promising potential for optoelectronic applications.

• OSTI ID: 22420200
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 12 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOPYRITE
CRYSTAL DEFECTS
GALLIUM NITRIDES
INTERFACES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NEUTRON DIFFRACTION
PEAKS
THIN FILMS
X-RAY DIFFRACTION