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Investigations of CuInSe sub 2 thin films and contacts

Technical Report ·
DOI:https://doi.org/10.2172/5668996· OSTI ID:5668996
 [1]
  1. California Inst. of Tech., Pasadena, CA (USA)
This report describes various studies of copper indium diselenide (CuInSe{sub 2}) thin-film materials and contacts. The CuInSe{sub 2} films prepared on substrates of glass or Mo-coated glass show the same polycrystalline structure, a Cu-rich composition, and a preferential grain orientation; however, they exhibit different surface morphologies, grain sizes, and shapes. Rutherford backscattering measurements were performed on different samples before and after 600{degree}C annealing. This treatment induced Se evaporation from the CuInSe{sub 2} films and interdiffusion between Mo and CuInSe{sub 2}.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); California Inst. of Tech., Pasadena, CA (USA)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5668996
Report Number(s):
SERI/STR-211-3612; ON: DE90000301; CNN: XB-8-07133-1
Country of Publication:
United States
Language:
English