CuInSe[sub 2] thin film formation by rapid annealing of the elemental precursor

Conference · Mon Nov 30 23:00:00 EST 1992 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7050959

Gabor, A M; Hermann, A M ^[1]; Tuttle, J R; Albin, D S; Swartzlander, A; Noufi, R ^[2]

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1. Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States)
2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Cu, In, and Se were coevaporated onto unheated Mo-coated substrates of glass and Al[sub 2]O[sub 3]. Cu and In partially segregated in these precursors in a direction normal to the film plane. The precursors were annealed in a rapid thermal processor to form CuInSe[sub 2] (CIS). The films adhered better to the Al[sub 2]O[sub 3] than to the glass upon annealing. Solar cells were made by evaporating CdS and top contacts onto the CIS. The best cell had an efficiency of 3.5% and was obtained after annealing the as-fabricated device in air.

• OSTI ID: 7050959
• Report Number(s): CONF-9205115--
• Journal Information: AIP Conference Proceedings (American Institute of Physics); (United States), Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Vol. 268:1; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOY SYSTEMS
ANNEALING
CHALCOGENIDES
COATINGS
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTALS
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
FILMS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM SELENIDES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
SELENIDES
SELENIUM COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
TERNARY ALLOY SYSTEMS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
VAPOR DEPOSITED COATINGS